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Sensors's
parameters
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We offer a set of ultraviolet detectors
made on GaN / AlGaN. In the subsequent figure we present spectral
responsivities of visible blind, solar blind and UVB Schottky' barrier
detectors along with p-i-n type of photodetector, which covers the
wavelength range of 320-365nm. All Schottky diodes exhibit
responsivities greater than 0.1 A/W and detectivities greater than 2
1011cm Hz1/2 W-1. The p-i-n diode has responsivity of 0.15 A/W and
detectivity better than 2 1012cm Hz1/2 W-1. At present we develop p-i-n
detectors for spectral ranges 280-320nm and 280-365nm. Schottky barrier
detectors are assembled in TO-5 header and a metal cup with a quartz
window. The p-i-n diode package is a plastic type with a window made on
sapphire. GaN detectors can be applied in many fields due to their
unique properties.
Features:
- active surfaces 0.8 mm2,
- responsivity > 0.1 A/W,
- detectivity > 2x1011 cm Hz1/2W-1
for p-i-n diode,
- detectivity > 2x1012 cm Hz1/2W-1
for schottky diode,
- dynamic resistivity (U = 0)
10GW,
- UV/visible light rejection ratio >
103.
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